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Warranty 1 year
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Описание
SemiconductorsDiscrete SemiconductorsIGBTs The Infineon dual fast trench IGBT module with TRENCHSTOP IGBT4 and Emitter Controlled 4 diode. Highest power density
Технические характеристики:
Channel Type: N
Configuration: Dual
Maximum Collector Emitter Voltage: 1200 V
Maximum Continuous Collector Current: 600 A
Maximum Gate Emitter Voltage: ±20V
Number of Transistors: 2
Specification
Overview
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Processor
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Display
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RAM
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Storage
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Video Card
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Connectivity
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Features
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Battery
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General
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