FP15R12W1T4B11BOMA1, Диодные модули

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Описание

SemiconductorsDiscrete SemiconductorsIGBTs The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V.

Технические характеристики:

Channel Type: N
Configuration: Series
Maximum Collector Emitter Voltage: 1200 V
Maximum Continuous Collector Current: 200 A
Maximum Gate Emitter Voltage: ±20V
Maximum Operating Temperature: +125 °C

Specification

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