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SemiconductorsDiscrete SemiconductorsIGBTs The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.
Configuration: Single
Maximum Collector Emitter Voltage: 3300 V
Maximum Continuous Collector Current: 1.6 kA
Maximum Power Dissipation: 3600 kW
Number of Transistors: 2
Package Type: AG-IHVB130
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