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Warranty 1 year
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Описание
igbts The Infineon dual IGBT module with fast IGBT4 and emitter controlled 4 diode. Optimal electrical performance
Технические характеристики:
Collector- Emitter Voltage VCEO Max:: 1700 V
Collector-Emitter Saturation Voltage:: 2.3 V
Configuration:: Dual
Continuous Collector Current at 25 C:: 310 A
Gate-Emitter Leakage Current:: 100 nA
Maximum Gate Emitter Voltage:: 20 V
Specification
Overview
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Processor
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Display
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RAM
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Storage
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Video Card
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Connectivity
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Features
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Battery
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General
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