FP100R12N3T7BPSA1, Диодные модули

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Артикул: 169922

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Описание

igbts The Infineon three phase PIM IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings.

Технические характеристики:

Channel Type: N
Configuration: Common Emitter
Maximum Collector Emitter Voltage: 1200 V
Maximum Continuous Collector Current: 100 A
Maximum Gate Emitter Voltage: ±20V
Maximum Power Dissipation: 20 mW

Specification

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