F3L150R12W2H3B11BPSA1, Диодный модуль

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Описание

SemiconductorsDiscrete SemiconductorsIGBTs The Infineon IGBT module has rugged mounting due to integrated mounting clamps. This IGBT module features a VCEsat with positive temperature coefficient and Al2O3 substrate with low thermal resistance.

Технические характеристики:

DC Ток Коллектора: 45А
Power Dissipation: 150Вт
Выводы БТИЗ: Press Fit
Конфигурация БТИЗ: Six Pack(Full Bridge)
Линейка Продукции: EasyPACK
Максимальная Рабочая Температура: 150°C

Specification

Overview

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General

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