DF200R07W2H3B77BPSA1 , Диодный модуль

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Описание

SemiconductorsDiscrete SemiconductorsIGBTs The Infineon has EconoDUAL 1200 V, 300 A dual TRENCHSTOP IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology.

Технические характеристики:

Configuration: Dual
Maximum Collector Emitter Voltage: 1200 V
Maximum Continuous Collector Current: 300 A
Maximum Gate Emitter Voltage: 20V
Maximum Power Dissipation: 20 mW
Mounting Type: Chassis Mount

Specification

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